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Field Effect Transistor Plasma Oscillators for Terahertz Emission and Detection
Last modified: 2012-01-06
Abstract
This is an overview of the recent experimental results of Montpellier TERALAB group concerning the application of plasma oscillations in field effect transistors (FETs) for the generation and detection of TeraHertz (THz) radiation. The loading effects on responsivity and ultimately high detctivity of single and Si-MOSFET are shown as well as gate voltage tuneable emission from GaN/AlGaN HEMTs.
Keywords
plasama waves; Terahertz; transistors