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ZnO nanostructures furnish a track to a modern creation of devices. In this work, vertically zinc oxide (ZnO) nanorods have been strongly synthesized through an uncomplicated hydrothermal process on silicon substrates without the aid of a catalyst.  Silicon substrate with seed layer was then vertically inserted into the aqueous precursor solution. The as-synthesized ZnO nanowires have diameters between 100-140 nm and lengths around 1 µm.  It exhibits a stable UV emission at around 532 nm. The current-voltage (I-V) characteristics of platinum (Pt)  ZnO nanorods photosensor under dark and illumination conditions was studied.  The ideality factor (n) and Schottky barrier height (SBH) were ascertained by the I-V method. Well-defined response to UV illumination in the forward-biased state because of the photogeneration of further electron–hole pairs.