Ultrahigh frequency transport and terahertz plasmonics in nanoscale structures, metamaterials, and 2D materials II
14:00 Invited talk : Noncentrosymmetric Plasmon Modes in a Two-Dimensional Plasmonic Crystal
Viacheslav V. Popov
Kotelnikov Institute of Radio Engineering and Electronics (Russia) The plasmon modes in a two-dimensional plasmonic crystal lacking the inversion symmetry can be used for terahertz detection by generation of the plasmon-photogalvanic current. It is shown that the plasmon modes without inversion symmetry can be excited due to the resonant interaction of different plasmon modes in the planar plasmonic crystal with a noncentrosymmetric unit cell.
14:20 Invited talk : Time Response of Plasmonic Terahertz Detectors
Greg Rupper (1),Sergey Rudin (1),Michael Shur (2)
(1)U.S. Army Research Laboratory (USA) , (2)Rensselaer Polytechnic Institute (USA) The plasma wave response of the two-dimensional electron gas of a HEMT transistor can be used for terahertz detection. In this work, we evaluate the time response of these detectors using a hydrodynamic model that includes the effects of pressure and viscosity. We evaluate and compare the impulse response of the HEMT channel and the response of the detector to an amplitude modulated signal. Our results establish the ultimate response time for these detectors.
14:40 Invited talk : Plasmonic Enhancement of Graphene Heterostructure based Terahertz Detectors
V. Ryzhii (1),Vladimir Mitin (2),T. Otsuji (3),V. Ya. Aleshkin (4),A. A. Dubinov (4),M. Ryzhii (5),M. S. Shur (6)
(1)Institute of Ultra-High-Frequency Semiconductor Electronics (Russia) , (2)University at Buffalo (USA) , (3)Tohoku University (Japan) , (4)Lobachevsky State University (Russia) , (5)University of Aizu (Japan) , (6)Rensselaer Polytechnic Institute (USA) We review recent advances in double-graphene-layer (D-GL) graphene plasmon heterostructures for terahertz (THz) detectors. When the band offset is aligned to the THz photon energy, the D-GL structure can mediate photon-assisted resonant tunneling through a thin tunnel barrier layer separating the GLs, resulting in the resonant detection of the THz radiation. The cooperative double-resonant excitation with structure-sensitive graphene plasmons gives rise to extremely high gain and/or responsivity in the THz detectors.
15:00 Invited talk : Graphene-based devices for Terahertz photonics
University of Pisa and NEST-CNR (Italy) Graphene, a single-layer of carbon atoms arranged in a two-dimensional honeycomb lattice is nowadays attracting considerable attention for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, and saturable absorbers. I will illustrate the realization of THz detectors based on antenna-coupled graphene field-effect transistors (FETs), and discuss the development and applications of electrically switchable metamaterial devices.
15:20 Invited talk : Metamaterial and Metastructure Devices Research for High Frequency RF-Photonics and THz Applications
Weimin Zhou, Daniel Shreiber, Gerard Dang, Monica Taysing-Lara, Grace Metcalfe, Eric Ngo, Matt Ivill, Melanie W. Cole
US Army Research Laboratory (USA) This paper summarizes our in-house research on novel metamaterials and metastructures with new opto-electronic properties and use them to design and fabricate devices with new functionalities such as Si-based slow-light, low-loss high-contrast metastructure hollow-core waveguides, tunable 3D split-ring metamaterial-based THz modulators, etc. These devices will provide basic building blocks for future chip-scale semiconductor opto-electronic integrated circuits, and provide new capabilities for ultra-high frequencies RF systems as well as THz systems.
15:40 : Design, Fabrication and Characterization of an Active Single-Negative Tunable Metamaterial Structure in the THz Spectrum
Daniel Shreiber, Weimin Zhou, Gerard Dang, Monica Taysing-Lara, Grace Metcalfe, Eric Ngo, Mathew Ivill, Melanie Cole
US Army Research Lab (USA) We describe design, fabrication and characterization of a novel active metamaterial structure in the THz spectrum. The proposed surface is based on incorporation of Ba0.6Sr0.4TiO3 (BST) thin film whose dielectric constant can be altered by applying DC bias. Verified numerical model that predicts a resonant frequency as a function of BST dielectric constant is presented. The resonant frequency shift due to applied DC bias is experimentally verified, compared with the model and other benefits are discussed.
15:55 : THz Plasmonics for Testing VLSI under Bias
Michael Shur (1),John Suarez (2),Greg Rupper (3),Sergey Rudin (3),Meredith Reed (3)
(1)Rensselaer Polytechnic Institute (USA) , (2)U.S. Army CERDEC (USA) , (3)U.S. Army Research Laboratory (USA) We present simulation and measurement results demonstrating the application of the THz excited decaying plasma waves in field effect transistors for testing silicon VLSI under bias. In agreement with the data and our model, the direct current response induced by the THz wave is strongly affected by the gate leakage current. This technique has potential for non-destructive VLSI testing and evaluation.