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Advances in Hybrid Plasmonics I

10:30 Invited talk : Plasmonic-photonic crystal coupled nanolaser

Ali Belarouci (1),Taiping Zhang (2),Segolene Callard (2)

(1)Sherbrooke University (Canada) , (2)Ecole Centrale de Lyon (France)

We propose and demonstrate a hybrid photonic-plasmonic nanolaser that combines the light harvesting features of a dielectric photonic crystal cavity with the extraordinary confining properties of an optical nano-antenna. For this purpose, we developed a novel fabrication method based on multi-step electron-beam lithography. We show that it enables the robust and reproducible production of hybrid structures. Coherent coupling of the photonic and plasmonic modes is highlighted and opens up a broad range of new hybrid nanophotonic devices
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10:50 Invited talk : Surface Plasmon Enhanced Optoelectronics

Pierre Berini

University of Ottawa (Canada)

Metallic nanoantennas and gratings can couple efficiently incident optical beams to SPPs. Such nanostructures ensure strong field overlap with active regions when formed on semiconductors while operating simultaneously as a device electrode. The excitation of SPPs thereon alters trade-offs between modulation/speed in modulators, or responsivity/speed in photodetectors, because the active region can be shrunk to the nanoscale while maintaining good performance due to field enhancement. SPP-enhanced photodetectors and modulators on silicon are reviewed and discussed.
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11:10 Invited talk : Integrated Hybrid Plasmonic-Photonic Structures for Enhanced Light-matter Interaction

Mayamreza Chamanzar, Hamed Mousavi, Ye Luo, Hossein Taghinejad, Mohammad Taghinejad, Ali A. Eftekhar, Ali Adibi

Georgia Institute of Technology (USA)

Recent progress in the integration of highly-controlled nanoplasmonic structures with nanophotonic structures in an integrated platform for enhancement of light-matter interaction will be discussed, and its advantages for a few important practical applications will be discussed. On one hand, the use of integrated nanophotonic structures for highly efficient coupling of light into plasmonic nanostructures will be demonstrated.
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11:30 Invited talk : Graphene and metal-insulator-semiconductor (MIS) plasmons

Lin Chen (1),Wei Hong (1),Xun Li (2)

(1)Huazhong University of Science and Technology (China) , (2)McMaster University (China)

Surface plasmon polaritons (SPPs) provides the capability of manipulating light signal with nanoscale dimension. Here we will present our recent work on the design of novel plasmonic waveguides based on graphene and metal-insulator-semiconductor (MIS). And their potential applications have also been briefly discussed.
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11:50 Invited talk : Photothermal switching of silicon resonators integrated with metal-insulator-metal absorbers

Xi Chen (1),Yuechun Shi (2),Fei Lou (1),Lech Wosinski (1),Min Yan (1),Min Qiu (3)

(1)Royal Institute of Technology (Sweden) , (2)Nanjing University (China) , (3)Zhejiang University (China)

Here we demonstrated the all-optical switching in a cascade of two silicon microdisk resonators integrated with metal-insulator-metal (MIM) absorbers. The tuning of the individual silicon microdisk is induced by the localized heat generation in the continuous-wave (CW) laser pumped MIM absorber. Such a design requires no buffer layer and enables localized heat injection on the selected device, which provides a promising route to the densely integrated micro-resonator switch array with fast temporal response and low switching power.
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12:10 Invited talk : Hybrid plasmonic waveguide for nonlinear four-wave mixing generation and enhancement

Stefano Palomba (1),Fernando Diaz (1),Boris Kuhlmey (1),Taiki Hatakeyama (2),Xiang Zhang (2)

(1)University of Sydney (Australia) , (2)University of California (USA)

We report the first experimental demonstration of a nonlinear four-wave mixing signal generated in a hybrid plasmonic waveguide (HPWG), constituted by a nonlinear dielectric material (Si3N4), sandwiched between a metallic layer (gold) and a Si nanowire. We observe an enhanced nonlinear signal compared to the bare Si nanowire in case of a high order TM mode excitation.
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